SIS590DN-T1-GE3

Manufacturer :

Vishay / Siliconix

Product Category :

MOSFET

Channel Mode :

Enhancement

Id - Continuous Drain Current :

4 A

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

SMD/SMT

Number of Channels :

2 Channel

Package / Case :

PowerPAK 1212-8

Packaging :

Cut Tape, MouseReel, Reel

Pd - Power Dissipation :

17.9 W, 23.1 W

Qg - Gate Charge :

9 nC, 22.4 nC

Rds On - Drain-Source Resistance :

186 mOhms, 338 mOhms

Technology :

SI

Tradename :

TrenchFET

Transistor Polarity :

N-Channel, P-Channel

Vds - Drain-Source Breakdown Voltage :

100 V

Vgs - Gate-Source Voltage :

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage :

2.5 V