SUD35N10-26P-E3

Mfr.Part #
SUD35N10-26P-E3
Manufacturer
Vishay Semiconductors
Package/Case
TO-252-3
Datasheet
Download
Description
MOSFET 100V 35A 83W 26mohm @ 10V

Request A Quote(RFQ)

* Contact Name:
* Company:
* E-Mail:
* Phone:
* Comment:
* Captcha:
loading...
Manufacturer :
Vishay Semiconductors
Product Category :
MOSFET
Channel Mode :
Enhancement
Id - Continuous Drain Current :
35 A
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Package / Case :
TO-252-3
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
83 W
Qg - Gate Charge :
47 nC
Rds On - Drain-Source Resistance :
26 mOhms
Technology :
SI
Tradename :
TrenchFET
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
100 V
Vgs - Gate-Source Voltage :
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage :
2.5 V
Datasheets
SUD35N10-26P-E3

Manufacturer related products

Catalog related products

Related products

Part Manufacturer Stock Description
SUD35N10-26P-BE3 Vishay / Siliconix 3,587 MOSFET 100V N-CH (D-S)
SUD35N10-26P-GE3 Vishay Semiconductors 1,215 MOSFET 100V 35A 83W 26mohm @ 10V
SUD35N10-26P-T4GE3 Vishay Semiconductors 0 MOSFET N-Channel 100-V D-S