IRLD024PBF

Mfr.Part #
IRLD024PBF
Manufacturer
Vishay / Siliconix
Package/Case
DIP-4
Datasheet
Download
Description
MOSFET 60V N-CH HEXFET MOSFET HEXDI

Request A Quote(RFQ)

* Contact Name:
* Company:
* E-Mail:
* Phone:
* Comment:
* Captcha:
loading...
Manufacturer :
Vishay / Siliconix
Product Category :
MOSFET
Channel Mode :
Enhancement
Id - Continuous Drain Current :
2.5 A
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Number of Channels :
1 Channel
Package / Case :
DIP-4
Packaging :
Tube
Pd - Power Dissipation :
1.3 W
Qg - Gate Charge :
18 nC
Rds On - Drain-Source Resistance :
100 mOhms
Technology :
SI
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
60 V
Vgs - Gate-Source Voltage :
- 10 V, + 10 V
Vgs th - Gate-Source Threshold Voltage :
1 V
Datasheets
IRLD024PBF

Manufacturer related products

  • Vishay / Siliconix
    Power Management IC Development Tools Evaluation Board For SIC464ED
  • Vishay / Siliconix
    Power Management IC Development Tools Development Board For SiP32429 Series
  • Vishay / Siliconix
    Power Management IC Development Tools Reference Board for SIP403 series
  • Vishay / Siliconix
    Power Management IC Development Tools Development Board For SiP32408 Series
  • Vishay / Siliconix
    Power Management IC Development Tools Development Board For SiP32430 Series

Catalog related products

Related products

Part Manufacturer Stock Description
IRLD014PBF Vishay / Siliconix 55 MOSFET 60V N-CH HEXFET MOSFET HEXDI
IRLD110PBF Vishay / Siliconix 2,842 MOSFET 100V N-CH HEXFET HEXDI
IRLD120PBF Vishay Semiconductors 4,009 MOSFET 100V N-CH HEXFET HEXDI