SI4501BDY-T1-GE3

Manufacturer :

Vishay Semiconductors

Product Category :

MOSFET

Channel Mode :

Enhancement

Id - Continuous Drain Current :

9.5 A, 6.4 A

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

SMD/SMT

Number of Channels :

2 Channel

Package / Case :

SO-8

Packaging :

Cut Tape, MouseReel, Reel

Pd - Power Dissipation :

4.5 W, 3.1 W

Qg - Gate Charge :

25 nC, 42 nC

Rds On - Drain-Source Resistance :

17 mOhms, 27 mOhms

Technology :

SI

Tradename :

TrenchFET

Transistor Polarity :

N-Channel, P-Channel

Vds - Drain-Source Breakdown Voltage :

30 V, 8 V

Vgs - Gate-Source Voltage :

- 20 V, + 20 V, - 8 V, + 8 V

Vgs th - Gate-Source Threshold Voltage :

800 mV, 450 mV