SIA537EDJ-T1-GE3
- Mfr.Part #
- SIA537EDJ-T1-GE3
- Manufacturer
- Vishay / Siliconix
- Package/Case
- SC-70-6
- Datasheet
- Download
- Description
- MOSFET -20V Vds 8V Vgs PowerPAK SC-70
Request A Quote(RFQ)
- * Contact Name:
- * Company:
- * E-Mail:
- * Phone:
- * Comment:
- * Captcha:
-
- Manufacturer :
- Vishay / Siliconix
- Product Category :
- MOSFET
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 4.5 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 2 Channel
- Package / Case :
- SC-70-6
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 7.8 W
- Qg - Gate Charge :
- 16 nC, 25 nC
- Rds On - Drain-Source Resistance :
- 23 mOhms, 44 mOhms
- Technology :
- SI
- Tradename :
- TrenchFET
- Transistor Polarity :
- N-Channel, P-Channel
- Vds - Drain-Source Breakdown Voltage :
- 12 V, 20 V
- Vgs - Gate-Source Voltage :
- - 8 V, + 8 V
- Vgs th - Gate-Source Threshold Voltage :
- 400 mV
- Datasheets
- SIA537EDJ-T1-GE3
Manufacturer related products
-
-
Vishay / SiliconixPower Management IC Development Tools Development Board For SiP32429 Series
-
-
Vishay / SiliconixPower Management IC Development Tools Development Board For SiP32408 Series
-
Vishay / SiliconixPower Management IC Development Tools Development Board For SiP32430 Series
Catalog related products
Related products
Part | Manufacturer | Stock | Description |
---|---|---|---|
SIA517DJ-T1-GE3 | Vishay Semiconductors | 10,022 | MOSFET 12V Vds 8V Vgs PowerPAK SC-70 |
SIA519EDJ-T1-GE3 | Vishay Semiconductors | 741 | MOSFET N- & P- Channel 20V MOSFET |
SIA527DJ-T1-GE3 | Vishay Semiconductors | 13,732 | MOSFET -12V Vds 8V Vgs SC-70 N&P PAIR |
SIA533EDJ-T1-GE3 | Vishay Semiconductors | 2,975 | MOSFET -12V Vds 8V Vgs PowerPAK SC-70 |