IRLD120PBF

Manufacturer :

Vishay Semiconductors

Product Category :

MOSFET

Channel Mode :

Enhancement

Id - Continuous Drain Current :

1.3 A

Maximum Operating Temperature :

+ 175 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

Through Hole

Number of Channels :

1 Channel

Package / Case :

DIP-4

Packaging :

Tube

Pd - Power Dissipation :

1.3 W

Qg - Gate Charge :

12 nC

Rds On - Drain-Source Resistance :

270 mOhms

Technology :

SI

Transistor Polarity :

N-Channel

Vds - Drain-Source Breakdown Voltage :

100 V

Vgs - Gate-Source Voltage :

- 10 V, + 10 V

Vgs th - Gate-Source Threshold Voltage :

1 V