SIZ998BDT-T1-GE3

Manufacturer :

Vishay / Siliconix

Product Category :

MOSFET

Channel Mode :

Enhancement

Id - Continuous Drain Current :

54.8 A, 94.6 A

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

SMD/SMT

Number of Channels :

2 Channel

Packaging :

Cut Tape, MouseReel, Reel

Pd - Power Dissipation :

20 W, 32.9 W

Qg - Gate Charge :

12 nC, 31.1 nC

Rds On - Drain-Source Resistance :

33.8 mOhms, 43.9 mOhms

Technology :

SI

Tradename :

TrenchFET

Transistor Polarity :

N-Channel

Vds - Drain-Source Breakdown Voltage :

30 V

Vgs - Gate-Source Voltage :

- 16 V, + 20 V

Vgs th - Gate-Source Threshold Voltage :

2.2 V